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Under the leadership of Kazuo Iwama, Sony started a large development effort on CCDs involving a significant investment. The first KH-11 KENNEN reconnaissance satellite equipped with charge-coupled device array ( 800 × 800 pixels) technology for imaging was launched in December 1976. Kunii at Matsushita (now Panasonic) in 1981. To further reduce smear from bright light sources, the frame-interline-transfer (FIT) CCD architecture was developed by K. Dyck at Fairchild in 1973 to reduce smear and eliminate a mechanical shutter. The interline transfer (ILT) CCD device was proposed by L.
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Steven Sasson, an electrical engineer working for Kodak, invented the first digital still camera using a Fairchild 100 × 100 CCD in 1975. Fairchild's effort, led by ex-Bell researcher Gil Amelio, was the first with commercial devices, and by 1974 had a linear 500-element device and a 2D 100 × 100 pixel device. Several companies, including Fairchild Semiconductor, RCA and Texas Instruments, picked up on the invention and began development programs.
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By 1971, Bell researchers led by Michael Tompsett were able to capture images with simple linear devices. Development of the device progressed at a rapid rate. This device had input and output circuits and was used to demonstrate its use as a shift register and as a crude eight pixel linear imaging device. The first working CCD made with integrated circuit technology was a simple 8-bit shift register, reported by Tompsett, Amelio and Smith in August 1970. Patent 4,085,456) on the application of CCDs to imaging was assigned to Tompsett, who filed the application in 1971. This was the first experimental application of the CCD in image sensor technology, and used a depleted MOS structure as the photodetector. It was demonstrated by Gil Amelio, Michael Francis Tompsett and George Smith in April 1970. The first experimental device demonstrating the principle was a row of closely spaced metal squares on an oxidized silicon surface electrically accessed by wire bonds. The concept was similar in principle to the bucket-brigade device (BBD), which was developed at Philips Research Labs during the late 1960s. The essence of the design was the ability to transfer charge along the surface of a semiconductor from one storage capacitor to the next. The device could also be used as a shift register. The initial paper describing the concept in April 1970 listed possible uses as memory, a delay line, and an imaging device. They conceived of the design of what they termed, in their notebook, "Charge 'Bubble' Devices". This led to the invention of the charge-coupled device by Boyle and Smith in 1969.
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As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that the charge could be stepped along from one to the next. They realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny MOS capacitor. Smith at Bell Labs were researching MOS technology while working on semiconductor bubble memory. In the late 1960s, Willard Boyle and George E. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, with MOS capacitors being the basic building blocks of a CCD, and a depleted MOS structure used as the photodetector in early CCD devices. However, the large quality advantage CCDs enjoyed early on has narrowed over time and since the late 2010s CMOS sensors are the dominant technology, having largely if not completely replaced CCD image sensors.
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In applications with less exacting quality demands, such as consumer and professional digital cameras, active pixel sensors, also known as CMOS sensors (complementary MOS sensors), are generally used. Although CCDs are not the only technology to allow for light detection, CCD image sensors are widely used in professional, medical, and scientific applications where high-quality image data are required. These MOS capacitors, the basic building blocks of a CCD, are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface the CCD is then used to read out these charges. In a CCD image sensor, pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors. CCD sensors are a major technology used in digital imaging. Under the control of an external circuit, each capacitor can transfer its electric charge to a neighboring capacitor. A specially developed CCD in a wire-bonded package used for ultraviolet imagingĪ charge-coupled device ( CCD) is an integrated circuit containing an array of linked, or coupled, capacitors.